cystech electronics corp. spec. no. : c821d3 issued date : 2006.11.23 revised date :2012.07.13 page no. : 1/ 7 BTD1805AD3 cystek product specification low vcesat npn epitaxial planar transistor BTD1805AD3 description the device is manufactured in np n planar technology by using a ?bas e island? layout. the resulting transistor shows exceptional high gain performan ce coupled with very low saturation voltage. features ? very low collector-to-emitter saturation voltage ? fast switching speed ? high current gain characteristic ? large current capability ? pb-free lead plating package applications ? ccfl drivers ? voltage regulators ? relay drivers ? high efficiency low voltage switching applications symbol outline BTD1805AD3 b base c collector e emitter to-126ml e c b
cystech electronics corp. spec. no. : c821d3 issued date : 2006.11.23 revised date :2012.07.13 page no. : 2/ 7 BTD1805AD3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage (i e =0) v cbo 120 v collector-emitter voltage (i b =0) v ceo 60 v emitter-base voltage (i c =0) v ebo 8 v collector current (dc) i c 5 collector current (pulse) i cp 10 (note 1) a base current i b 2 a power dissipation @ t a =25 p d 1.5 power dissipation @ t c =25 p d 20 w thermal resistance, junction to ambient r ja 83.3 c/w thermal resistance, junction to case r jc 6.25 c/w junction temperature tj 150 c storage temperature tstg -55~+150 c note : 1. single pulse , pw Q 380 s,duty Q 2%. characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 120 - - v i c =100 a, i e =0 *bv ceo 60 - - v i c =1ma, i b =0 bv ebo 8 - - v i c =100 a, i c =0 i cbo - - 0.1 a v cb =120v, i e =0 i ebo - - 0.1 a v eb =8v, i c =0 *v ce(sat) 1 - - 50 mv i c =100ma, i b =5ma *v ce(sat) 2 - 190 250 mv i c =2a, i b =50ma *v ce(sat) 3 - 230 300 mv i c =3a, i b =150ma *v ce(sat) 4 - - 400 mv i c =5a, i b =200ma *v ce(sat) 5 - - 300 mv i c =2a, i b =20ma *v ce(sat) 6 - - 500 mv i c =2a, i b =10ma *v be(sat) - 0.9 1 v i c =2a, i b =100ma *h fe 1 200 - 450 - v ce =2v, i c =100ma *h fe 2 120 - - - v ce =2v, i c =5a *h fe 3 40 - - - v ce =2v, i c =10a f t - 150 - mhz v ce =10v, i c =50ma cob - 50 - pf v cb =10v, f=1mhz t on - 50 - ns t stg - 1.35 2.5 s t f - 120 1000 ns v cc =30v, i c =10i b 1=-10i b 2=1a, r l =30 *pulse test : pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c821d3 issued date : 2006.11.23 revised date :2012.07.13 page no. : 3/ 7 BTD1805AD3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200u a 300u a 400u a 500u 1ma ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5ma 2ma 2.5ma 5ma ib=500ua emitter grounded output characteristics 0 1 2 3 4 5 6 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=2ma 4ma 6ma 10ma 20ma emitter grounded output characteristics 0 1 2 3 4 5 6 7 8 9 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 20ma 50ma current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v 125c 75c 25c current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=2v 125c 75c 25c
cystech electronics corp. spec. no. : c821d3 issued date : 2006.11.23 revised date :2012.07.13 page no. : 4/ 7 BTD1805AD3 cystek product specification typical characteristics(cont.) current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=5v 125c 75c 25c saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=20ib 125c 75c 25c saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=50ib 125c 75c 25c saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=100ib 125c 75c 25c saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib 25c 75c 125c on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbeon@vce=2v 25c 75c 125c
cystech electronics corp. spec. no. : c821d3 issued date : 2006.11.23 revised date :2012.07.13 page no. : 5/ 7 BTD1805AD3 cystek product specification typical characteristics(cont.) capacitance vs reverse-biased voltage 10 100 1000 10000 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 5 10 15 20 25 0 50 100 150 200 case temeprature---tc() power dissipation---pd(w) ordering information device package shipping BTD1805AD3 to-126ml (pb-free lead plating package) 200 pcs / bag, 15 bags/box, 10 boxes/carton
cystech electronics corp. spec. no. : c821d3 issued date : 2006.11.23 revised date :2012.07.13 page no. : 6/ 7 BTD1805AD3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 150 c 200 c 60-120 seconds 60-180 seconds time maintained above: ? temperature (t l ) 183 c ? time (t l ) 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c821d3 issued date : 2006.11.23 revised date :2012.07.13 page no. : 7/ 7 BTD1805AD3 cystek product specification to-126ml dimension marking: d1805a 1 2 3 e c b device name date code: year+month year: 2005 5,2006 6, ?., etc month: jan 1,feb 2,?,sep 9, oct a nov b, dec c style: pin 1.emitter 2.collector 3.base 3-lead to-126ml plastic package cystek packa g e code: d3 *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.118 0.134 3.000 3.400 e *0.090 *2.28 a1 0.071 0.087 1.800 2.200 e1 0.176 0.183 4.460 4.660 b 0.026 0.034 0.660 0.860 l 0.594 0.610 15.100 15.500 b1 0.046 0.054 1.170 1.370 l1 0.051 0.059 1.300 1.500 c 0.018 0.024 0.450 0.600 p 0.159 0.167 4.040 4.240 d 0.307 0.323 7.800 8.200 - 1 0.118 0.126 3.000 3.200 e 0.425 0.441 10.800 11.200 - 2 0.122 0.130 3.100 3.300 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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